3D00800 - SEMI 3D8 - Guide for Describing Silicon Wafers for Use as 300 mm Carrier Wafers in a 3DS-IC Temporary Bond-Debond (TBDB) Process StdVol-Process Chemicals replaced by SEMI C70

replaced by SEMI C70

本文書における計量の標準単位としては，国際単位系（SI）が使用される。米国常用単量は参考目的のみのために括弧内に併記され，最も近い数値に丸められている。

diatomic gas comprising approximately 78% of the earth’s atmosphere

This Standard was technically approved by the Flat Panel Display – Factory Automation Global Technical Committee

3D00800 - SEMI 3D8 - Guide for Describing Silicon Wafers for Use as 300 mm Carrier Wafers in a 3DS-IC Temporary Bond-Debond (TBDB) Process StdVol-Process Chemicals replaced by SEMI C70This Guide is intended to address the needs of the 3D Stacked IC (3DS IC) industry by defining the items parameters needed to procure virgin silicon carrier wafers to be used in a 3DS IC process. This Guide defines the items parameters to acquire silicon wafers to be used as carrier wafers in a temporary bond debond (TBDB) application. This Guide describes silicon wafers with nominal diameter of 300 mm although, for 3DS IC applications, the actual