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MF039700 - SEMI MF397 - Test Method for Resistivity of Silicon Bars Using a Two-Point Probe StdPbc-0125 4-95 (first published)

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Description

4-95 (first published)

implantation

0) define the CR and CM

SEMI’s Data Path Task Force formed a working group to define a successor to the venerable GDSII Stream format

MF039700 - SEMI MF397 - Test Method for Resistivity of Silicon Bars Using a Two-Point Probe StdPbc-0125 4-95 (first published)This Test Method covers the measurement of the resistivity of single crystal bars having cross sections that are uniform in area and square, rectangular or round in shape, and having resistivity between 0. 0009 cm and 3000 cm. This Test Method is intended for use on single crystals of silicon of either n or p type for which the uniformity of the crystal cross section is such that the area can be accurately calculated. The specimen cross sectional area

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