M08200 - SEMI M82 - Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy Revision:SEMI M82-0712 - Superseded 3 In addition

3  In addition

It has been replaced by SEMI　C97

SEMI E30-0423 (technical revision)

The method covers square and pseudo-square Si wafers for photovoltaic (PV) applications

M08200 - SEMI M82 - Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy Revision:SEMI M82-0712 - Superseded 3 In additionThis Test Method covers the determination of the carbon content in GaAs using infrared (IR) absorption. The test method utilizes the linear relationship between the carbon content and the integrated absorption of the localized vibration of substitutionally bonded carbon (CAs). At a measurement temperature of 300 K (room temperature) this absorption band is observed at 580 cm1, at 77 K between 582 and 583 cm1. This Test Method covers the determination