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This Test Method uses a four-point probe in a manner different from that of other ASTM methods for the measurement of the resistivity or sheet resistance of semiconductors
The test procedures that measure these characteristics are intended to be performed sequentially
The Guides may also be used to establish process control criteria for the incoming feedwater
1-0707 (technical revision)
M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity Revision:SEMI M51-1012 - Current This Test Method uses aThis Standard was technically approved by the global Silicon Wafer Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 30, 2012. Available at www. semiviews. org and www. semi. org in October 2012; originally published July 2002; previously published March 2003. NOTICE: This Document was completely rewritten in 2012. This Test Method describes procedures for characterizing silicon